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| Freescale Semiconductor Technical Data Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF1513 Rev. 7, 5/2006 RF Power Field Effect Transistor MRF1513T1 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 7.5 volt D portable and 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 3 Watts Power Gain -- 11 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability G * Characterized with Series Equivalent Large - Signal Impedance Parameters * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request S * In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. ARCHIVE INFORMATION CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Gate - Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature (1) Symbol VDSS VGS ID PD Tstg TJ Value - 0.5, +40 20 2 31.25 0.25 - 65 to +150 150 Unit Vdc Vdc Adc W W/C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 4 Unit C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. Calculated based on the formula PD = TJ - TC RJC Rating 1 Package Peak Temperature 260 Unit C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF1513T1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 520 MHz, 3 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 60 A) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 500 mAdc) Dynamic Characteristics Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) Drain Efficiency (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) Gps 10 50 11 55 -- -- dB % VGS(th) VDS(on) 1.0 -- 1.7 0.65 2.1 -- Vdc Vdc IDSS IGSS -- -- -- -- 1 1 Adc Adc Symbol Min Typ Max Unit ARCHIVE INFORMATION Coss Crss -- -- 16.5 2.2 -- -- pF pF MRF1513T1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Ciss -- 33 -- pF VGG C9 C8 + B2 C7 R4 B1 R3 C17 L1 Z7 DUT C10 C11 C12 Z8 Z9 Z10 Z11 C13 N2 RF OUTPUT C16 C15 + C14 VDD R2 R1 N1 RF INPUT C1 C2 C3 C4 C5 Z1 Z2 Z3 Z4 Z5 Z6 C6 ARCHIVE INFORMATION C1, C13 C2, C3, C4, C10, C11, C12 C5, C6, C17 C7, C14 C8, C15 C9, C16 L1 N1, N2 R1, R3 R2 0 to 20 pF Trimmer Capacitors 120 pF, 100 mil Chip Capacitors 10 mF, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 mF, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistors (0805) 1 k, 1/8 W Resistor Figure 1. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz 5 470 MHz Pout , OUTPUT POWER (WATTS) 4 3 2 1 VDD = 12.5 Vdc 0 0 0.05 0.10 0.15 Pin, INPUT POWER (WATTS) 0.20 -20 0 1 IRL, INPUT RETURN LOSS (dB) 520 MHz 450 MHz 500 MHz -5 0 VDD = 12.5 Vdc -10 500 MHz 470 MHz -15 520 MHz 450 MHz 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 2. Output Power versus Input Power Figure 3. Input Return Loss versus Output Power MRF1513T1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION B1, B2 Short Ferrite Beads, Fair Rite Products #2743021446 240 pF, 100 mil Chip Capacitors R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Board 33 k, 1/8 W Resistor 0.236 x 0.080 Microstrip 0.981 x 0.080 Microstrip 0.240 x 0.080 Microstrip 0.098 x 0.080 Microstrip 0.192 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.705 x 0.080 Microstrip 0.342 x 0.080 Microstrip 0.347 x 0.080 Microstrip 0.846 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper TYPICAL CHARACTERISTICS, 450 - 520 MHz 16 15 14 GAIN (dB) 13 12 11 10 VDD = 12.5 Vdc 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 450 MHz 520 MHz 500 MHz 470 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 30 VDD = 12.5 Vdc 20 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 500 MHz 520 MHz 470 MHz 450 MHz ARCHIVE INFORMATION Figure 4. Gain versus Output Power Figure 5. Drain Efficiency versus Output Power 6 5 4 3 2 1 450 MHz 470 MHz 500 MHz 520 MHz 70 65 520 MHz 60 470 MHz 55 50 45 600 40 0 100 200 300 400 IDQ, BIASING CURRENT (mA) VDD = 12.5 Vdc Pin = 20.3 dBm 500 600 500 MHz 450 MHz VDD = 12.5 Vdc Pin = 20.3 dBm 0 100 200 300 400 IDQ, BIASING CURRENT (mA) 500 Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current 80 70 60 50 40 30 Pin = 20.3 dBm IDQ = 50 mA 8 9 10 11 12 13 14 15 16 450 MHz 500 MHz 470 MHz 520 MHz 5 Pout , OUTPUT POWER (WATTS) 3 2 1 0 450 MHz 520 MHz 470 MHz 500 MHz Pin = 20.3 dBm IDQ = 50 mA 8 9 10 11 12 13 14 15 16 Eff, DRAIN EFFICIENCY (%) 4 20 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage Figure 9. Drain Efficiency versus Supply Voltage MRF1513T1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Pout , OUTPUT POWER (WATTS) Eff, DRAIN EFFICIENCY (%) VGG C9 C8 + B2 C7 R4 B1 R3 C16 L1 Z7 DUT C10 C11 Z8 Z9 Z10 C12 N2 C15 C14 + C13 VDD R2 N1 C1 C2 C3 C4 C5 R1 Z1 Z2 Z3 Z4 Z5 Z6 C6 RF OUTPUT RF INPUT ARCHIVE INFORMATION C1, C12 C2, C3, C4, C10, C11 C5, C6, C16 C7, C13 C8, C14 C9, C15 L1 N1, N2 R1 R2 1 to 20 pF Trimmer Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 mF, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 1 k, 1/8 W Resistor Figure 10. 400 - 470 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 470 MHz 5 400 MHz Pout , OUTPUT POWER (WATTS) 4 3 2 1 VDD = 12.5 Vdc 0 0 0.02 0.08 0.04 0.06 Pin, INPUT POWER (WATTS) 0.10 0.12 -20 0 1 IRL, INPUT RETURN LOSS (dB) 440 MHz 470 MHz -5 0 VDD = 12.5 Vdc -10 440 MHz 400 MHz -15 470 MHz 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MRF1513T1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION B1, B2 Short Ferrite Bead, Fair Rite Products #2743021446 330 pF, 100 mil Chip Capacitors R3 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Board 15 Chip Resistor (0805) 33 k, 1/8 W Resistor 0.253 x 0.080 Microstrip 0.958 x 0.080 Microstrip 0.247 x 0.080 Microstrip 0.193 x 0.080 Microstrip 0.132 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.494 x 0.080 Microstrip 0.941 x 0.080 Microstrip 0.452 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper TYPICAL CHARACTERISTICS, 400 - 470 MHz 18 17 16 GAIN (dB) 15 14 13 12 VDD = 12.5 Vdc 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 470 MHz 440 MHz 70 60 Eff, DRAIN EFFICIENCY (%) 400 MHz 50 40 30 20 10 0 0 1 440 MHz 400 MHz 470 MHz VDD = 12.5 Vdc ARCHIVE INFORMATION Figure 13. Gain versus Output Power Figure 14. Drain Efficiency versus Output Power 6 400 MHz Eff, DRAIN EFFICIENCY (%) 5 440 MHz 4 470 MHz 3 2 1 VDD = 12.5 Vdc Pin = 18.7 dBm 0 100 200 300 400 IDQ, BIASING CURRENT (mA) 500 600 70 65 470 MHz 60 440 MHz 55 50 45 40 400 MHz VDD = 12.5 Vdc Pin = 18.7 dBm 0 100 300 400 200 IDQ, BIASING CURRENT (mA) 500 600 Figure 15. Output Power versus Biasing Current 5 4 3 2 1 0 Pin = 18.7 dBm IDQ = 50 mA 8 9 10 11 12 13 14 15 16 400 MHz 440 MHz 470 MHz 80 70 60 50 40 30 20 8 9 Figure 16. Drain Efficiency versus Biasing Current Pout , OUTPUT POWER (WATTS) Eff, DRAIN EFFICIENCY (%) 470 MHz 440 MHz 400 MHz Pin = 18.7 dBm IDQ = 50 mA 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1513T1 6 Figure 18. Drain Efficiency versus Supply Voltage RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Pout , OUTPUT POWER (WATTS) VGG C9 C8 + B2 C7 R4 B1 R3 C17 L4 Z6 DUT C10 C11 C12 Z7 L2 Z8 L3 Z9 C16 C15 + C14 VDD R2 RF INPUT N1 C1 C2 R1 Z1 L1 C3 Z2 Z3 C4 Z4 Z5 C6 RF OUTPUT Z10 C13 N2 C5 ARCHIVE INFORMATION C1, C13 C2, C4, C10, C12 C3 C5 C6, C17 C7, C14 C8, C15 C9, C16 C11 L1 L2 L3 Figure 19. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 5 Pout , OUTPUT POWER (WATTS) 4 3 2 1 0 VDD = 12.5 Vdc 0 0.05 0.10 0.15 Pin, INPUT POWER (WATTS) 0.20 IRL, INPUT RETURN LOSS (dB) 175 MHz 135 MHz 0 155 MHz -5 135 MHz 155 MHz 175 MHz -10 -15 -20 VDD = 12.5 Vdc 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MRF1513T1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION B1, B2 Short Ferrite Beads, Fair Rite Products #2743021446 330 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 12 pF, 100 mil Chip Capacitor 130 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,000 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitor 26 nH, 4 Turn, Coilcraft 8 nH, 3 Turn, Coilcraft 55.5 nH, 5 Turn, Coilcraft L4 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 33 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 W Chip Resistor (0805) 56 W, 1/8 W Chip Resistor 10 W, 1/8 W Chip Resistor 33 kW, 1/8 W Chip Resistor 0.115 x 0.080 Microstrip 0.230 x 0.080 Microstrip 1.034 x 0.080 Microstrip 0.202 x 0.080 Microstrip 0.260 x 0.223 Microstrip 1.088 x 0.080 Microstrip 0.149 x 0.080 Microstrip 0.171 x 0.080 Microstrip 0.095 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper TYPICAL CHARACTERISTICS, 135 - 175 MHz 18 17 16 GAIN (dB) 15 14 13 12 VDD = 12.5 Vdc 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 155 MHz Eff, DRAIN EFFICIENCY (%) 175 MHz 135 MHz 70 60 50 40 30 20 10 0 0 1 155 MHz 175 MHz 135 MHz VDD = 12.5 Vdc ARCHIVE INFORMATION Figure 22. Gain versus Output Power Figure 23. Drain Efficiency versus Output Power 6 175 MHz 80 75 175 MHz 70 65 60 55 50 135 MHz VDD = 12.5 Vdc Pin = 19.5 dBm 0 100 300 400 200 IDQ, BIASING CURRENT (mA) 500 600 155 MHz 5 155 MHz 4 135 MHz 3 VDD = 12.5 Vdc Pin = 19.5 dBm 2 0 100 200 300 400 IDQ, BIASING CURRENT (mA) 500 600 Figure 24. Output Power versus Biasing Current 5 4 3 2 135 MHz 1 0 80 70 60 50 40 30 16 20 8 9 Figure 25. Drain Efficiency versus Biasing Current Pout , OUTPUT POWER (WATTS) Eff, DRAIN EFFICIENCY (%) 135 MHz 155 MHz 175 MHz 175 MHz 155 MHz Pin = 19.5 dBm IDQ = 50 mA 8 9 10 11 12 13 14 15 Pin = 19.5 dBm IDQ = 50 mA 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 26. Output Power versus Supply Voltage MRF1513T1 8 Figure 27. Drain Efficiency versus Supply Voltage RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Pout , OUTPUT POWER (WATTS) Eff, DRAIN EFFICIENCY (%) Zin 450 f = 520 MHz f = 520 MHz ZOL* 450 470 Zin 470 ZOL* 135 Zin ZOL* 135 f = 175 MHz f = 175 MHz Zo = 10 f = 400 MHz Zo = 10 ARCHIVE INFORMATION VDD = 12.5 V, IDQ = 50 mA, Pout = 3 W f MHz 450 470 500 520 Zin Zin 4.64 +j5.82 5.42 +j6.34 5.96 +j5.45 4.28 +j4.94 ZOL* 13.11 +j2.15 12.16 +j3.26 11.03 +j5.42 10.99 +j7.18 Zin VDD = 12.5 V, IDQ = 50 mA, Pout = 3 W f MHz 400 440 470 Zin 4.72 +j4.38 4.88 +j6.34 3.22 +j5.24 ZOL* 12.57 +j1.88 11.21 +j5.87 9.82 +j8.63 VDD = 12.5 V, IDQ = 50 mA, Pout = 3 W f MHz 135 155 175 Zin ZOL* 16.55 +j1.82 22.01 +j10.32 15.59 +j5.38 15.55 +j9.43 22.03 +j8.07 22.08 +j6.85 = Complex conjugate of source impedance with parallel 15 resistor and 120 pF capacitor in series with gate. (See Figure 1). = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 10). Zin = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 19). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 28. Series Equivalent Input and Output Impedance MRF1513T1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION f = 400 MHz Table 5. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 50 mA f MHz 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.93 0.81 0.76 0.76 0.77 0.79 0.80 0.81 0.82 0.83 0.84 - 94 - 131 - 153 - 160 - 164 - 167 - 169 - 171 - 172 - 173 - 175 |S21| 22.09 12.78 6.31 3.92 2.74 1.99 1.55 1.25 1.02 0.85 0.70 S21 125 101 81 69 60 54 48 44 38 35 29 |S12| 0.044 0.052 0.047 0.044 0.040 0.036 0.034 0.028 0.027 0.017 0.018 S12 33 6 - 10 - 19 - 26 - 31 - 37 - 40 - 42 - 42 - 49 |S22| 0.77 0.61 0.59 0.64 0.70 0.75 0.80 0.82 0.86 0.88 0.91 S22 - 81 - 115 - 135 - 142 - 147 - 151 - 155 - 158 - 161 - 166 - 163 ARCHIVE INFORMATION IDQ = 500 mA f MHz 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.84 0.80 0.78 0.78 0.78 0.78 0.79 0.79 0.80 0.81 0.82 - 127 - 152 - 166 - 171 - 173 - 175 - 176 - 177 - 178 - 178 - 179 |S21| 32.57 17.23 8.62 5.58 4.08 3.14 2.55 2.14 1.80 1.54 1.31 S21 112 97 85 79 72 68 63 60 54 51 46 |S12| 0.025 0.025 0.025 0.023 0.022 0.020 0.022 0.019 0.018 0.015 0.012 S12 17 13 -9 -9 -9 - 10 - 15 - 20 - 31 - 25 - 36 |S22| 0.64 0.64 0.65 0.67 0.69 0.71 0.74 0.76 0.79 0.80 0.81 S22 - 130 - 153 - 163 - 166 - 166 - 167 - 168 - 168 - 170 - 170 - 172 IDQ = 1 A f MHz 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.84 0.80 0.78 0.77 0.77 0.78 0.78 0.78 0.79 0.80 0.80 - 129 - 153 - 167 - 172 - 174 - 175 - 177 - 177 - 178 - 178 - 179 |S21| 32.57 17.04 8.52 5.53 4.06 3.13 2.54 2.13 1.81 1.54 1.30 S21 111 97 85 79 73 69 64 60 55 51 46 |S12| 0.023 0.024 0.023 0.020 0.020 0.021 0.017 0.017 0.015 0.013 0.011 S12 24 13 5 -7 - 11 -9 - 26 - 14 - 23 - 31 - 17 |S22| 0.61 0.64 0.65 0.67 0.69 0.72 0.74 0.75 0.78 0.79 0.80 S22 - 137 - 156 - 165 - 167 - 167 - 167 - 168 - 168 - 170 - 170 - 172 MRF1513T1 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. ARCHIVE INFORMATION Cds Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The MRF1513T1 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION ARCHIVE INFORMATION MRF1513T1 12 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION MOUNTING The specified maximum thermal resistance of 4C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Freescale Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two - port stability analysis with this device's S - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, "RF Small - Signal Design Using Two - Port Parameters" for a discussion of two port network theory and stability. NOTES MRF1513T1 RF Device Data Freescale Semiconductor 13 NOTES MRF1513T1 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W G RF Device Data Freescale Semiconductor EEEE E EEEEEE E EEEEEE E EEEEEE E EEEEEE EEE 1 3 ZONE X 2 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE S VIEW Y - Y CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC MRF1513T1 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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"Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MRF1513T1 Rev. 16 7, 5/2006 Document Number: MRF1513 RF Device Data Freescale Semiconductor |
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